ll4148/ll4448/ll914b 500mw high speed smd switching diode small signal diode ? fast switching device(t rr <4.0ns) ? surface device type mounting ? moisture sensitivity level 1 ? matte tin (sn) terminal finish ? pb free version and rohs compliant min max min max ? case : mini-melf package (jedec do-213ac) 3.30 3.70 0.130 0.146 ? high temperature soldering guaranteed : 270 c/10s 1.40 1.60 0.055 0.063 0.25 0.40 0.010 0.016 1.25 1.40 0.049 0.055 suggested pad layout package ll34 ll34 ll34 ll34 ll34 ll34 maximum ratings notes:1. test condition : 8.3ms single half sine-wave superimposed on rated load (jedec method) notes:2. valid provided that electrodes are kept at ambient temperature repetitive peak forward current i frm 500 ma part no. ll4148 l0 ll4448 l0 packing 10k / 13" reel 10k / 13" reel 2.5k / 7" reel peak forward surge current (note 1) tp=1us ll4148 l1 ll4448 l1 rating at 25 c ambient temperature unless otherwise specified. type number ll914b l1 2.5k / 7" reel 2.5k / 7" reel v r power dissipation repetitive peak reverse voltage symbol reverse voltage p d v rrm junction and storage temperature range mean forward current i fm i f(av) t j , t stg r ja thermal resistance (junction to ambient) (note 2) non-repetitive peak forward current forward continuous current i f ma c -65 to + 200 450 150 c/w 300 ma 300 ma 75 d 500 100 mini-melf (ll34) units v v mw hermetically sealed glass ? weight : approx. 31 mg maximum ratings and electrical characteristics features mechanical data unit (mm) dimensions a b c ? all external surfaces are corrosion resistant and leads are readily solderable value unit (inch) i fsm 2a ? polarity : indicated by cathode band ordering information ll914b l0 10k / 13" reel 2.00 0.079 2.50 0.098 1.25 0.049 0.197 5.00 version : g12
ll4148/ll4448/ll914b 500mw high speed smd switching diode small signal diode electrical characteristics i r =100ua i r =5ua forward voltage ll4448, ll914b i f =5.0ma ll4148 i f =50.0ma ll4448, ll914b i f =100.0ma v r =20v v r =75v junction capacitance v r =0, f=1.0mhz reverse recovery time (note 3) notes:3. reverse recovery test conditions: i f =i r =10ma, r l =100 , i rr =1ma tape & reel specification 178 1 330 1 55 min 100min 14.4max symbol c d 13.0 0.20 1.75 0.10 8.00 0.30 d1 1.50 0.10 0.230.005 item carrier width carrier length carrier depth sprocket hole reel outside diameter reel inner diameter feed hole width sprocke hole position 1.83 0.10 3.73 0.10 1.80 0.10 d2 d a b 3.50 0.05 f p0 overall tape thickness t punch hole position sprocke hole pitch embossment center 4.00 0.10 2.00 0.05 trr 4.0 reel width w1 p1 tape width w e ns 1.0 reverse leakage current i r 25 5.0 v f c j 0.62 0.72 pf 4.0 1.0 reverse breakdown voltage v (br) 100 75 symbol min max units dimension(mm) a na v maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise specified. v type number top cover tape carieer ta p e a n y additional label ( if re q uired ) tsc label direction of feed t c d p1 p0 a b f w e w1 d1 d2 d version : g12
ll4148/ll4448/ll914b 500mw high speed smd switching diode small signal diode rating and sharacteristic curves fig 1 typical forward characteristics 0 300 600 900 1200 1500 0.001 0.01 0.1 1 10 100 1000 fig 2 reverse current vs reverse voltage 0.01 0.1 1 10 100 0 20 40 60 80 100 120 reverse current (ua) fig 3 admissible power dissipation curve 0 100 200 300 400 500 600 0 50 100 150 200 power dissipation (mw) fig 5 forward resistance vs. forward current 1 10 100 1000 10000 0 0 1 10 100 forward current (ma) dynamic forward resistance ( ? ) ta=25 ta=25c instantaneous forward voltage (v) reverse voltage (v) reverse voltage (v) ambient temperature (c) 0.1 version : g12 instantaneous forward current (ma)
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